Nitride semiconductor laser element

ABSTRACT

A nitride semiconductor laser element includes a laminate. The laminate includes on a substrate a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer, and constitutes a cavity resonator. The laminate includes an element region, an exposed region and an island layer. The element region is a region in which the laser element is formed. The exposed region is a region in which at least the first conductivity type nitride semiconductor layer is exposed on both sides of the element region in the cavity direction, and which is provided continuously in a cavity resonating direction of the laser element. The island layer is separated from the element region by the exposed region, and that is disposed in a corner of the nitride semiconductor laser element.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 12/174,258 filed on Jul. 16, 2008, now U.S. Pat. No. 7,838,316Also, this application claims priority to Japanese Patent ApplicationNo. 2007-186432, filed on Jul. 18, 2007, and Japanese Patent ApplicationNo. 2008-182302, filed on Jul. 14, 2008. The entire disclosures of U.S.patent application Ser. No. 12/174,258 and Japanese Patent ApplicationNos. 2007-186432 and 2008-182302 are hereby incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a method for manufacturing a nitridesemiconductor laser element and a nitride semiconductor laser element.

2. Background Information

There is growing demand for semiconductor laser elements in which acompound semiconductor, for example, nitride semiconductors expressed bythe general formula In_(x)Al_(y)Ga_(1-x-y)N (0≦x, 0≦y, 0≦x+y≦1) areused, in a wide variety of applications, such as in optical disk systemscapable of recording and reproducing large volumes of information athigh density (such as a next-generation DVD), or in electronic devicessuch as personal computers. Therefore, considerable research has beendevoted to using nitride semiconductors to manufacture semiconductorlaser elements with good reproducibility while maintaining stablecharacteristics.

For example, a method in which grooves that extend in a cavity directionof a laser element and is formed from the upper face of a nitridesemiconductor growth layer to the interface constituting a pn junctionhas been proposed as a method for preventing chipping, pulverization,etc., of a ridge that would otherwise be caused by propagation from aregion of concentrated dislocation in the substrate if a cavity end faceis formed by cleavage, and thereby reducing damage to the nitridesemiconductor laser element and protecting the current-voltagecharacteristics (see, JP-2004-327879-A).

However, even when the cleavage of a cavity end face is performedsubstantially perpendicular to these grooves, the effect of thedislocation density, crystal defects, etc., within the nitridesemiconductor layer or substrate can cause the cleavage plane to bedistorted from its intended position, making it difficult to obtain asufficiently stable yield.

Usually, when a nitride semiconductor laser element is produced, asemiconductor layer and electrodes are formed in a wafer state, afterwhich the wafer is divided into bars (hereinafter also referred to as“primary cleavage”), and the semiconductor layer bars are divided intochips (hereinafter also referred to as “secondary cleavage”).Consequently, if the primary cleavage is distorted from its intendedposition, a laser element of the desired cavity length will not beobtained, and this greatly affects the characteristics. Also, when thedivision is made where the electrodes are formed, the electrodes maydroop down to the cavity end face, and this adversely and markedlyaffects the characteristics. Furthermore, it is difficult to divide thesemiconductor layer bars into chips, and this greatly affects the yield.

Also, usually, cleaving into bars forms the cavity end face of thenitride semiconductor laser element, and an end face protective film isformed on the cavity end face. That is, light is emitted from the cavityend face formed in primary cleavage. Accordingly, high accuracy isrequired in primary cleavage, or, to put it another way, a smooth cavityend face needs to be formed.

Dislocations and crystal defects are generally present in a nitridesemiconductor. When a laser element is produced from a nitridesemiconductor, a problem is that leakage caused by these dislocationsand crystal defects can lower the voltage in the minute electric currentregion and result in poor current and voltage characteristics. If thestart-up voltage is low, this leads to problems such as a shorterelement service life and poor electrostatic discharge.

SUMMARY OF THE INVENTION

An object is to provide a nitride semiconductor laser element in which adecrease in start-up voltage can be prevented, good current and voltagecharacteristics as well as consistent quality can be obtained.

According to one aspect of the present invention, a nitridesemiconductor laser element includes a laminate. The laminate includeson a substrate a first conductivity type nitride semiconductor layer, anactive layer, and a second conductivity type nitride semiconductorlayer, and constitutes a cavity resonator. The laminate includes anelement region, an exposed region and an island layer. The elementregion is a region in which the laser element is formed. The exposedregion is a region in which at least the first conductivity type nitridesemiconductor layer is exposed on both sides of the element region inthe cavity direction, and which is provided continuously in a cavityresonating direction of the laser element. The island layer is separatedfrom the element region by the exposed region, and that is disposed in acorner of the nitride semiconductor laser element.

With the nitride semiconductor laser element of the present invention, adecrease in start-up voltage can be prevented, good current and voltagecharacteristics as well as consistent quality are obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is simplified plan view illustrating the layout of the elementregion and exposed region formed by the manufacturing method of thepresent invention;

FIG. 2( a) is simplified plan view illustrating the unit element, FIG.2( a) is a magnified view of FIG. 2( a), and FIGS. 2( b) and 2(c) aresimplified cross sections illustrating the laser elements formed by themanufacturing method of the present invention;

FIG. 3 is simplified plan view illustrating the layout of the elementregion and exposed region formed by the manufacturing method of theComparative Example;

FIG. 4 is a graph illustrating the relation of driving current andvoltage of the laser element in the present invention example;

FIG. 5 is a graph illustrating the relation of driving current andvoltage of the laser element in the Comparative Example;

FIG. 6 is simplified plan view illustrating another layout of theelement region and exposed region formed by the manufacturing method ofthe present invention;

FIG. 7( a) is simplified plan view illustrating the unit element, FIG.7( a′) is a magnified view of FIG. 7( a), and FIGS. 7( b) to 7(d) aresimplified cross sections illustrating the laser elements formed by themanufacturing method of the present invention;

FIG. 8 is simplified plan view illustrating still another layout of theelement region and exposed region formed by the manufacturing method ofthe present invention;

FIG. 9( a) is simplified plan view illustrating another layout of theelement region and exposed region formed by the manufacturing method ofthe present invention, and 9(a′) is simplified partial plan viewillustrating the unit element;

FIG. 10 is simplified plan view illustrating still another layout of theelement region and exposed region formed by the manufacturing method ofthe present invention;

FIG. 11( a) is simplified plan view illustrating another layout of theelement region and exposed region formed by the manufacturing method ofthe present invention, and 11(b) is simplified plan view illustratingthe unit element;

FIG. 12( a) is simplified plan view illustrating still another layout ofthe element region and exposed region formed by the manufacturing methodof the present invention, and 12(b) is simplified plan view illustratingthe unit element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

For manufacturing a nitride semiconductor laser element of the presentinvention, firstly, a laminate of semiconductor layers in which a firstconductivity type nitride semiconductor layer, an active layer and asecond conductivity type nitride semiconductor layer are formed above asubstrate in that order are provided.

The substrate here may be a insulating substrate, such as sapphire,spinel (MgAl₂O₄), and a substrate, such as SiC (6H, 4H, 3C), Si, ZnSe,ZnO, GaAs, diamond, oxide substrates which are lattice-matched to anitride semiconductor, such as lithium niobate, neodymium gallate, butit is preferably a nitride semiconductor substrate, such as GaN, AlN,etc.

The substrate is, for example, preferably a nitride semiconductorsubstrate having an off angle of no more than 10° and greater than 0.03°to the first main face and/or the second main face. The thickness of thesubstrate is at least 50 μm and no more than 10 mm, for example.

The nitride semiconductor substrate can be formed by a vapor phasegrowth method such as MOCVD (Metal Organic Chemical Vapor Deposition),HVPE (Hydride Vapor Phase Epitaxy), MBE (Molecular Beam Epitaxy), or thelike, a hydrothermal synthesis method in which crystals are grown in asupercritical fluid, a high pressure method, a flux method, a meltmethod, or the like. A commercially available substrate may be used.

The nitride semiconductor substrate may be a substrate in whichdislocation density is periodically distributed in a stripe shapein-plane on at least one surface. An example is to form a semiconductorlayer in which regions having a lower dislocation (for example, a firstregion) and a high dislocation (for example, a second region) are formedby ELO (Epitaxial Lateral Overgrowth) method in an alternating manner ina stripe shape, or to form a semiconductor layer by lateral growth on asubstrate, and use this semiconductor layer as a substrate to dispose astripe region of a different crystal defect density, crystal direction,etc. A polarity may be distributed in a stripe shape at the first regionand the second region. The high dislocation region may be in circularshape, elliptic shape, square shape and the like as well as a stripeshape.

The low dislocation region may have a dislocation density per unit areaof 1×10⁷/cm² or less, and preferably 1×10⁶/cm² or less, and the highdislocation region may have a higher dislocation density than the lowdislocation region.

When the first and second regions extend alternatively in stripes, thefirst region may have a width of about 10 to 500 μm, preferably about100 to 500 μm, and the second region may have a width of 2 to 100 μm,preferably 10 to 50 μm. The shape of the stripe may be a broken line.

When the second region is in circular shape, the second region may havea diameter of about 2 to 100 μm. When the second region is in ellipticshape, the second region may have a major axis diameter of about 2 to100 μm and a minor axis diameter of about 2 to 100 μm.

Those dislocation measuring can be employed a CL (cathode luminescence)method or TEM (Transmission Electron Microscopy) observation.

Also, a different crystal growth face may be distributed on one surfaceof the nitride semiconductor substrate. For example, when the firstregion may be the plane (0001), the second region may be the plane(000-1), the plane (10-10), the plane (11-20), the plane (10-14), theplane (10-15), the plane (11-24) and other crystal growing plane, amongthese, the plane (000-1) is preferable. If such substrate having apartially different crystal growth face is employed, stress anddistortion occurred in the substrate can be lessened. This allowslaminating the semiconductor layers to be thicker, i.e., more than 5 μmthick without forming a stress relieving layer over the substrate.

Any of the various known substrates disclosed, for instance, inJP-2005-175056-A, JP-2004-158500-A, JP-2003-332244-A, or the like may beused.

The substrate is preferably a substrate over which a buffer layer,intermediate layer, for example, a layer having a general formula ofAl_(x)Ga_(1-x)N (0≦x≦1), or the like may be formed before forming thelaminate which functions as a laser element.

The laminate formed on the first surface of the substrate is composed ofnitride semiconductor, and may include a layer having a general formulaof In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). In addition to this,it may be used the semiconductor layer which is partly substituted withB as a group III element, or is substituted a part of N as a group Velement with P or As.

The first and second conductivity type nitride semiconductor layers meann-type or p-type nitride semiconductor layers, respectively. The n-typenitride semiconductor layer may doped with at least one n-type impurityof IV or VI group elements, such as Si, Ge, Sn, S, O, Ti, Zr, Cd etc.The p-type nitride semiconductor layer may doped with at least onep-type impurity, such as Mg, Zn, Be, Mn, Ca, Sr etc. The dopedconcentration is, for example, about 5×10¹⁶/cm³ to about 1×10²¹/cm³. Allof layers in the n-type or p-type nitride semiconductor layers may notnecessarily contain n-type or p-type impurity.

The laminate preferably has a structure which is a SCH (SeparateConfinement Hetero-structure) wherein an optical waveguide isconstituted by providing n-side and p-side optical guide layers aboveand below the active layer. The first and second conductivity typenitride semiconductor layers may have structures in which compositionand/or thickness of the layers are different to each other.

The laminate is produced, for example, by growing a first conductivitytype nitride semiconductor layer (hereinafter also referred to as an“n-type semiconductor layer” or “n-side semiconductor layer”), an activelayer, and a second conductivity type nitride semiconductor layer(hereinafter also referred to as a “p-type semiconductor layer” or“p-side semiconductor layer”), in that order. The n-type semiconductorlayer and the p-type semiconductor layer may have a single filmstructure, a multilayer structure, or a super-lattice structurecomprising two layers of mutually different compositional ratios. Theselayers may also have a composition gradient layer or a concentrationgradient layer. By the formation of cavity in the laminate, the lightgenerated in the active layer is resonated and amplified.

The n-type semiconductor layer may have a structure comprising two ormore layers of different compositions and/or impurity concentrations.

For example, a first n-type semiconductor layer may be composed ofAl_(x)Ga_(1-x)N (0≦x≦0.5), and preferably Al_(x)Ga_(1-x)N (0≦x≦0.3). Thespecific condition of film growing may preferably be at growingtemperature of about 900° C. or more in the reactor. Also, the firstn-type semiconductor layer can function as a clad layer. A suitable filmthickness is about 0.5 to 5 μm.

A second n-type semiconductor layer can function as a light waveguidelayer and is composed of In_(x)Al_(y)Ga_(1-x-y)N (0<x≦1, 0≦y<1,0<x+y≦1). A suitable film thickness is about 0.1 to 5 μm. The secondn-type semiconductor layer can be omitted.

One or more semiconductor layers may be additionally formed between then-type semiconductor layers.

The active layer may have either a multiple quantum well structure or asingle quantum well structure. The well layer is preferably expressed bythe general formula In_(x)Al_(y)Ga_(1-x-y)N (0<x≦1, 0y<1, 0<x+y≦1) andcontains at least indium. Light can be emitted in the UV band by raisingthe aluminum content. Light can be emitted in a wavelength band of 300to 650 nm. Emission efficiency can be improved by forming the activelayer with a quantum well structure.

The p-type semiconductor layer is laminated over the active layer.

A first p-type semiconductor layer can be formed from Al_(x)Ga_(1-x)N(0≦x≦0.5) containing p-type impurities. The first p-type semiconductorlayer functions as a p-side electron confinement layer.

A second p-type semiconductor layer can be formed fromIn_(x)Al_(y)Ga_(1-x-y)N (0<x≦1, 0≦y<1, 0<x+y≦1).

A third p-type semiconductor layer can be formed from Al_(x)Ga_(1-x)N(0≦x≦0.5) containing p-type impurities. The third p-type semiconductorlayer is preferably formed by a super lattice structure comprising GaNand AlGaN. The third p-type semiconductor layer functions as a p-sideclad layer.

A fourth p-type semiconductor layer can be formed from Al_(x)Ga_(1-x)N(0≦x≦1).

Indium may be mixed in the crystals of these semiconductor layers. Thefirst p-type semiconductor layer and the second p-type semiconductorlayer can also be omitted. The suitable thickness of each layer is about3 nm to 5 μm. One or more semiconductor layers may be additionallyformed between the p-type semiconductor layers.

There is no particular restriction on a growth method of the nitridesemiconductor layer, it can be formed by means of any known method whichcan grow these nitride semiconductor layers, such as MOVPE(Metal-Organic Vapor Phase Epitaxy), MOCVD, HVPE, MBE or the like. Inparticular, MOCVD is preferable because it allows the nitridesemiconductor to be growth with good crystallinity under the conditionof reduced pressure to atmospheric pressure.

Next, the exposed region is then formed.

As shown in FIGS. 1 and 2 a, for example, an exposed region 11 a isformed on one or both sides of the region of the laminate surface inwhich the laser elements are formed (for example, the region demarcatedby the arrows X and Y in FIG. 1, and enclosed by the broken line). Inother words, it is formed continuously in the cavity direction(hereinafter also referred to as the “length direction”; the directionalong the arrow Y) in the region on one or both sides and adjacent tothe element region. As a result, the second conductivity type nitridesemiconductor layer of the laminate, for example, is separated into anelement region and an island layer.

The element region is that region of the laminate that functions as alaser element. This refers to a region having the first conductivitytype nitride semiconductor layer, the active layer, and the secondconductivity type nitride semiconductor layer on the substrate, andhaving an optical waveguide within this laminate. For instance, as shownin FIG. 2 b, this is the region of the second conductivity type nitridesemiconductor layer 13 that includes a ridge 14 in top view.

The exposed region 11 a is formed by removing at least the secondconductivity type nitride semiconductor layer and the active layer. Ifdesired, it can also be formed by optionally removing part of thesubstrate and/or the first conductivity type nitride semiconductorlayer. The removal of these layers can be accomplished by forming thedesired mask pattern, just as in the formation of the ridge, and usingthis mask to etch in the thickness direction of the laminate. The resultis that the first conductivity type nitride semiconductor layer or thesubstrate is exposed in the exposed region 11 a, and the exposed region11 a extends in the cavity direction.

There are no particular restrictions on the shape of the exposed region,but the planar shape of the laser element generally is that of aquadrangle, a parallelogram, a rectangle, a square, or a shape thatresembles one of these, so the planar shape of the exposed region ispreferably the same as the shape of the laser element (in this case, ashape that includes the island layer 13 a near the cavity end (near theregion along the arrows X in FIG. 1)). For example, if the elementregion has a planar shape that is substantially rectangular, it is goodfor the exposed region to be substantially rectangular as well.

The length of the exposed region (the length in the cavity direction)can be suitably determined according to the cavity length. There are noparticular restrictions on the width W1 (the width of the shapeincluding the island layer near the cavity end) of the exposed region inthe direction perpendicular to the cavity direction (hereinafter alsoreferred to as the “width direction”; the direction along the arrows X),but a specific example is a range from 1 to 300 μm, and preferably 2 to200 μm, and more preferably 5 to 100 μm. The width W1 of the exposedregion may vary in parts, with the region being wider or narrower.

Here, the cavity length L of the laser element (see FIG. 2 a′, which isa detail enlargement of the area near M in FIG. 2 a) is preferably about200 to 1200 μm, and the width W of the laser element about 100 to 500μm. The width W2 of the element region is preferably about 30 to 400 μm.

If a plurality of element regions are formed on the substrate, such aswhen a plurality of the elements are formed as a matrix or in thedirection perpendicular to the cavity direction, then a plurality of theexposed regions are also formed.

As shown in FIG. 1, when a plurality of elements are formed adjacent toone another on a wafer, the exposed regions are formed between theadjacent elements, allowing elements to be obtained by dividing at theexposed regions during secondary cleavage. Also, when a plurality ofexposed regions are formed, the widths of the exposed regions 11 a maybe all the same as shown in FIG. 1, or the widths of the exposed regions11 a and 21 a may be different as shown in FIG. 6.

In a special nitride semiconductor substrate described above, the widthsof the exposed regions are adjusted as appropriate, according todifferences such as the disposition of the first region and/or secondregion and so force, the dislocation density, the crystal defectdensity, the impurity concentration, the degree of texturing, thecrystal plane etc. For example, it is preferable to use a layout inwhich the widths of the exposed regions are alternatively different fromeach other.

If the widths of the exposed regions are thus formed according to thedisposition of the first region and/or second region, etc., for example,then the active layer and so forth constituting the cavity can beseparated from regions with relatively high dislocation density, crystaldefect density, etc., in the substrate and in the semiconductor layerlaminated thereon, and it will be possible to prevent leak currentcaused by dislocations, crystal defects, and so forth in the activelayer.

Also, the width of the element region may be varied and the width of theexposed region may be substantially fixed. In this case, it isparticularly effective when a special nitride semiconductor substrate isused as in varying the width of the exposed region. That is, the widthsof the element regions are adjusted as appropriate, according todifferences such as the disposition of the first region and/or secondregion and so force, the dislocation density, the crystal defectdensity, the impurity concentration, the degree of texturing, thecrystal plane etc. on the substrate. For example, it is preferable touse a layout in which the widths of the element regions are periodicallydifferent from each other.

If the widths of the element regions are thus formed according to thedisposition of the first region and/or second region, etc., for example,then the active layer and so forth constituting the cavity can beseparated from regions with relatively high dislocation density, crystaldefect density, etc., in the substrate and in the semiconductor layerlaminated thereon, and it will be possible to prevent leak currentcaused by dislocations, crystal defects, and so forth in the activelayer.

The island layer can be formed by leaving the second conductivity typenitride semiconductor layer and the active layer separated into islands,in part of the exposed region, during the formation of the exposedregions. The phrase “separated into islands” here means that the activelayer and the second conductivity type nitride semiconductor layer areseparated from the element region, and that they are formed shorter thanthe cavity length in the cavity direction.

With the present invention, the island layer is formed so as to sandwichthe intended division location (the arrow X direction in FIGS. 1 and 6),the result being that cleavage is guided so as to be carried out at theintended division locations, and the substrate and the laminate can bedivided at the desired locations, forming a cavity end face. Even if thecleavage should deviate from the intended location, there will be nofurther deviation from the intended division location due to the exposedregions formed on the outside of the island layer, so the cleavagedirection is straightened, and this improves the cleavage yield.Therefore, the island layer is preferably formed near the cavity endface, and formed so as to follow the intended division locationsindicated by the arrows X.

As shown in FIG. 2 a′, the length L1 of the island layer is preferablyabout 1/100 to ⅕ with respect to the cavity length L. The width W3 ofthe island layer is preferably about 1/50 to ½ the width W of the laserelement. More specifically, the length L1 of the island layer may beabout 3 to 100 μm, preferably about 5 to 50 μm, and the width W3 of theisland layer may be about 3 to 100 μm, preferably about 5 to 50 μm.

If the island layer is formed as a rectangle as shown in FIGS. 1 and 2,then it is good for the ratio of the width W3 to length L1 of the islandlayer to be about 10:1 to 1:10. One or more island layers are formedwithin a single exposed region formed on one side of an element. If morethan one are formed, they may be disposed aligned in the cavitydirection, or disposed aligned in the width direction of the elements,but one each is preferably formed near the cavity end face on both sidesas shown in FIGS. 1 and 6.

The island layer is preferably not continuous in the cavity direction,and is instead separated.

The wafer will be distorted when the laminate is formed on thesubstrate, but distortion of the wafer can be lessened by removing thelaminate from suitable regions. In particular, cracking can besuppressed and distortion effectively lessened by removing the laminatefrom near the center in the cavity direction. This allows handling ofthe wafer in the manufacturing process to be smoother, and makes itpossible to manufacture laser elements of consistent quality moreefficiently.

Usually, with a semiconductor laser element, in addition to the divisionstep in which the cavity end face is formed (primary cleavage), there isalso a step of dividing in the cavity direction (a secondary cleavagestep of forming a side face of an element).

In this secondary cleavage step, the element may be damaged by breakagein an unintended direction, which is attributable to the crystal systemof the substrate or laminate, etc. However, as shown in FIG. 8 if theisland layer is separated, rather than being continuous in the cavitydirection, then the exposed region that is formed there will serve as anauxiliary groove for secondary cleavage, so the yield in the secondarycleavage step can be increased. In particular, if the island layer ispresent only at the end near the cavity end face, then cleavage will beguided so as to be carried out at the desired location, so the cleavagedirection is straightened, and this further improves the yield in thesecondary cleavage step.

In particular, with a substrate and laminate composed of a materialhaving a hexagonal crystal structure, problems such as chipping duringcleavage tend to occur when a side face is formed on an element at aplane other than the M plane or C plane (such as the A plane or Rplane).

However, a good yield can be achieved in secondary cleavage by formingthe island layer as discussed above, forming a groove by laser scribingat the intended division location in the cavity direction, and thendividing in the cavity direction. In this case, the exposed region ispreferably formed at substantially the same width as the width of theisland layer. Also, the exposed region is preferably provided such thatit is wider than the auxiliary groove (discussed below).

There are no particular restrictions on the shape or size of the islandlayer, which can be suitably adjusted according to the width of theexposed region and so forth. For example, it is good for the shape ofthe island layer to correspond to the shape of part of the exposedregion. The island layer may be narrower than the width of the exposedregion, as long as electrical insulation can still be ensured betweenthe island layer and the laminate in the element region. That is, theisland layer is preferably provided separated, so as to be insulatedfrom the element regions in the active layer and the p-typesemiconductor layer.

If it is, then when the specific nitride semiconductor substratediscussed above is used, a region then the active layer and so forthconstituting the cavity can be separated from regions with relativelyhigh dislocation density, crystal defect density, etc., and it will bepossible to prevent leak current caused by dislocations, crystaldefects, and so forth in the active layer. Furthermore, even if dirtshould adhere, for example, to a chip side face during secondarycleavage or in a subsequent step, since the element region is insulatedfrom the island layer as mentioned above, the generation of leak currentor the breakage of crystals from portions thereof can be prevented.

An example of a width that will ensure insulation here is one in whichthe width M in FIG. 1 is about 0.1 to 10 μm and preferably about 1 to 5μm. Also, the island layer may be disposed within about 5 μm or less,and especially about 4 μm or less, from the cavity end face cleaved bymeans of the auxiliary groove discussed below.

During cleavage, the cleavage could deviate slightly from the intendedlocation due to abnormal growth, partial crystal defects, etc. On theother hands, according to the present invention, there will be nofurther deviation from the intended division location at the exposedregion between the island layer and the element region, andrepositioning the cleavage direction to intended division location fromthe exposed region can be achieved. This avoids a decrease in cleavageyield.

As shown in FIG. 1, when a plurality of elements are formed adjacent toeach other in their width direction on a wafer, an island layer that iscontinuous between the adjacent elements can be formed. In this case,the island layer does not need to be symmetrical with the adjacentelements, and can be formed in any shape. This island layer may beseparated by providing an exposed portion as discussed below. The islandlayer provided flanking this exposed portion need not be symmetrical,and can be formed in any shape.

The pattern of the exposed region and the island layer is preferablyformed such that, as shown in FIG. 6, in the region constituting thecavity end face of the element region (near the faces divided by thearrows X), the width of the island layer and the exposed region ispartially greater (hereinafter, a region formed such that the width ofthe island layer and the exposed region is partially greater will bereferred to as a “wide region” or “protrusion”). That is, the exposedregion and the island layer may have a protrusion in the widthdirection. With the present invention, since the island layer isprovided at a corner of the element, the protrusion in the widthdirection may be formed protruding to the ridge side.

From another standpoint, the exposed region and the island layer mayhave a protrusion in the length direction. A protrusion in the lengthdirection may be formed in the cavity direction.

When the island layer is provided so as to protrude, the exposed regionis formed so as to encompass this island layer.

For example, as shown in FIG. 7 a′, which is a detail enlargement of thearea near M in FIG. 7 a, a protrusion with a length L2 and a width W4 isprovided in the width direction of the island layer with a length L1 anda width W3. In other words, a protrusion with a length L1-L2 and a widthW3 is provided in the cavity direction of the island layer with a lengthL2 and a width W3+W4 formed near the cavity end face. The exposed regionis formed around the outer periphery of this protrusion, and isseparated from the element region.

The width W4 of the protrusion is about ½ to 10 times the width W3 ofthe island layer (W3:W4=1:2 to 10:1). More specifically, it ispreferably about 10 to 100 with about 20 to 55 μm being even better. Thelength L2 of the protrusion is about 1/10 to 2 times the length L1 ofthe island layer (L1:L2=10:1 to 1:2). More specifically, it ispreferably about 2 to 100 μm, with about 3 to 50 μm being even better.An exposed region with a width of about 0.1 to 10 μm, and preferably 1to 5 μm, is formed around the outer periphery of the island layer andthe protrusion. The length LL from the end of the exposed region to theridge is preferably about 0.1 to 100 μm, with about 2 to 40 μm beingeven better. From another standpoint, there is preferably separation ofabout ⅕ to 20 times the ridge width. Forming a protrusion in this way inparticular affords a smooth cleavage plane in the light emission region.

The length L2 of the wide region (the length of the protrusion) ispreferably about ⅕ or less, and more preferably about 1/10 or less, withrespect to the cavity length L. A specific example of the range is about2.0 to 100 μm, and preferably about 3 to 50 μm.

Also, the width of the wide region (W3+W4) is preferably about 1/20 to ⅘with respect to the width W of the laser element. More specifically, thewidth W3 of the island layer is about 3 to 100 and preferably about 5 to50 μm. Forming the wide region in this way makes it possible for theisland layer to form a guide of the proper shape during cleavage of thecavity end face discussed below.

If the exposed region is formed so that its width (the width of theshape including the island layer near the cavity end) is greater in somepart, then the island layer may be formed correspondingly wider in somepart as shown in FIG. 6. That is, the island layer is mainly constitutedby may be formed continuously from the wide region to a region of lesswidth, in a corresponding shape (FIG. 6), or may be formed only in thewide region and in a shape corresponding to the shape thereof.Furthermore, it may be formed in a corresponding shape in only thenarrower region (the region with the original width of the exposedregion other than that near the end face). Forming the island layerwider makes it possible to cleave at the desired location by having theisland layer serve as an effective guide in the cleavage of the cavityend face in a subsequent step.

When the island layer is formed partially wider, the extent by which thewidth is increased may be about the same as that in the exposed region.The length over which the width is increased may be about the same asthat in the exposed region.

As shown in FIGS. 8 and 12, a plurality of island layers 33 a may bedisposed in a direction perpendicular to the cavity direction. Inparticular, the island layers are preferably formed so as to separate toeach other at the intended division location in the cavity direction.That is, an exposed region is provided so that the intended divisionlocation within the island layer (the region indicated by the brokenlines B1 and B2 in the auxiliary groove 15) is vertical split in thecavity direction. As a result, the exposed region provided so as tovertical split the island layer guides the cleavage to the desiredlocation, so not only is the yield of primary cleavage increased, butthere is less chipping during cleavage, and the yield can also beincreased in the secondary cleavage step.

As shown in FIGS. 11 a and 11 b, an exposed region 41 a may have a wideregion on just one side of the element, and an island layer 43 a may beprovided corresponding to this wide region. In other words, the widerisland layer 43 a may be formed on just one side of the element, and anexposed region may be provided so as to encompass this part. Providing awide region on just one side allows the ridge to be shifted away fromthe center of the laser element.

During wire bonding to the laser element, if the bonding is performedover the ridge, the impact thereof may damage the ridge, for example.

However, the wire bonding can be performed away from the ridge byproviding a wide region as mentioned above. Therefore, when the nitridesemiconductor layer is made narrower in order to achieve a more compactsize, the region in which wire bonding is performed can be made larger.

The island layer may be disposed at the end face on at least the lightemission side of the cavity, but is preferably disposed on the oppositeside as well.

Also, the island layer is preferably disposed in symmetry with respectto the ridge at the end face on at least the light emission side of thecavity. This allows optical confinement to be accomplished favorably,and contributes to transverse mode stability of the emitted light.Therefore, the island layer may be disposed at just one location out ofthe two cavity end face sides and the two sides in the cavity direction,but is preferably disposed at all of these. This will afford bettercleavage on the two side faces of the laser element.

The auxiliary groove is then formed. The auxiliary groove (hereinafter,it will be also referred to as a “first auxiliary groove”) is providedextending in a direction perpendicular to the cavity direction. In awafer state, the auxiliary groove is formed within the island layer oradjacent to the island layer. A cavity end face is formed by dividingthe substrate and the laminate along the auxiliary groove. Therefore, inan element state, it is provided adjacent to the island layer. Theauxiliary groove may be formed at least one cavity end face.

Within the island layer provided inside the exposed region, theauxiliary groove may be disposed so as to horizontally split the islandlayer as shown in FIG. 1 and elsewhere, or may be disposed apart fromthe exposed region. The auxiliary groove is preferably providedcontinuously from the island layer to the element region. That is, it ispreferably provided so as to intersect with the exposed region. Thisallows cleavage to be performed accurately at the intended location.

Furthermore, in the element region, the auxiliary groove may be disposedapart from the exposed region, or as shown in FIGS. 1 and 2, it may bedisposed linked to the exposed region. Regardless of whether or notthere is a ridge, the auxiliary groove may be disposed in the form of acontinuous line, or may be divided up in the form of a broken line, butit is preferably apart from the ridge and formed so as to straddle theridge. This is to minimize chipping, breakage, etc., of the ridge. Inthis case, the shortest distance LS from the ridge to the end of theauxiliary groove shown in FIG. 2 is preferably about 1 to 10 μm, andmore preferably about 2 to 8 μm.

There are no particular restrictions on the width of the auxiliarygroove (N in FIG. 1), but it is about 1 to 5 μm, for example. The depthof the auxiliary groove may be at least the depth to which the firstconductivity type nitride semiconductor layer is exposed, and may beabout the same depth as that of the exposed region, or about the depthto which the substrate is exposed.

A first auxiliary groove may be formed at the same time as the exposedregion in the same etching step and using the same mask, or it may beformed in a separate step.

A ridge is preferably formed on the surface of the laminate, i.e., thesecond conductivity type nitride semiconductor layer, and functions asan optical waveguide.

The width of the ridge may be from about 1.0 to 50.0 μm and preferablyfrom 1.0 to 3.0 μm for a laser element with a beam shape of a singlemode. The height of the ridge (the etching depth) may be, for example,may be from 0.1 to 2 μm by adjusting the thickness, material, and so onof the layer that makes up the p-side semiconductor layer. The ridge ispreferably set so as to be 100 to 2000 μm of cavity length. The ridgeneed not be all the same width in the extension direction of the cavity,and its side faces may be vertical or may be tapered with an angle ofabout 60 to 90°.

The ridge is preferably formed so as to be disposed perpendicular to theisland layer and the auxiliary groove. This allows a better lightemission cavity end face to be formed.

The ridge can be formed by forming a mask pattern on a nitridesemiconductor layer, and using this mask pattern for etching.

The mask pattern can be formed by using a CVD apparatus, for example, toform an oxide film such as SiO₂ or a nitride film such as SiN, andpatterning this film into the desired shape by utilizing a known methodsuch as photolithography and etching.

It is good for the thickness of the mask pattern to be such that themask pattern remaining on the ridge after the ridge has been formed canbe removed by lift-off in a subsequent step. An example is about 0.1 to5.0 μm. Patterning is preferably performed using RIE or another suchmethod, and the use of a halogen-based gas is favorable in this etching.For instance, a chlorine-based gas (such as Cl₂, CCl₄, SiCl₄, and/orBCl₃), fluorine-based gas (such as CF₄, CHF₃, and/or SiF₄), or the likecan be used favorably.

After this, the mask pattern is utilized to etch the nitridesemiconductor layer and form a ridge (see 14 in FIGS. 1 and 2). It isfavorable to perform this etching using RIE and a chlorine-based gas,for example. There are no particular restrictions on the substratetemperature during etching, but a lower temperature (e.g., about 60 to200° C.) is preferred.

Furthermore, the ridge may be formed either before or after theformation of the exposed region and the auxiliary groove.

The laser element of the present invention may also have a structure inwhich no ridge is formed, and a current constricting layer is formed.

In this case, firstly the first conductivity type nitride semiconductorlayer is formed, and a current constricting layer is formed that has afilm thickness of about 0.01 to 5 μm, and preferably about 300 nm orless, and has a stripe-like opening with a width of about 0.3 to 20 μm,and preferably about 0.5 to 3.0 μm.

Next, an active layer having a quantum well structure, for example, isformed over the semiconductor layer of the first conductivity typeexposed at the opening of this current constricting layer. The secondconductivity type nitride semiconductor layer is then formed over theactive layer.

This current constricting layer can be formed, for example, from aninsulating material such as SiO₂ or Al₂O₃, or from an i-type nitridesemiconductor layer.

The current constricting layer may be formed by forming thesemiconductor layer of the first conductivity type or semiconductorlayer of the second conductivity type, growing a current constrictinglayer on the surface thereof, forming a stripe-shaped opening in thiscurrent constricting layer, and growing another nitride semiconductorlayer.

If desired, a second auxiliary groove is also formed in the islandlayer. The second auxiliary groove is preferably formed after electrodeshave been formed on the second main face of the substrate, but beforethe primary cleavage is performed. This is because it allows forsmoother handling of the wafer in the manufacturing process, and allowslaser elements of consistent quality to be manufactured moreefficiently.

As shown in FIG. 9 a′, which is a detail enlargement of the area near Min FIG. 9 a, the second auxiliary groove 16 is formed so as to partiallyoverlap the auxiliary groove 15, and deeper than the auxiliary groove15. In a wafer state, the second auxiliary groove is formed in theisland layer. Therefore, in an element state, it is formed adjacent tothe island layer.

The second auxiliary groove is preferably formed wider and shorter thanthe first auxiliary groove. This allows the proper guidance to beperformed in the cleavage direction, and cleavage misalignment to bereduced. In particular, when the first auxiliary groove is providedcontinuously from the island layer to the element region, properguidance in the cleavage direction can be performed from the islandlayer all the way to the element region, allowing a cavity end face tobe formed more accurately.

When a nitride semiconductor substrate is used that has a region withrelatively high dislocation density, crystal defect density, etc., andthe second auxiliary groove is formed over this region, the element maybe damaged by cleavage in an intended direction, but providing thesecond auxiliary groove reduces such damage and raises the cleavageyield.

The second auxiliary groove may be formed as a single line on just oneisland layer, or a plurality may be formed as a broken line.

The second auxiliary groove can be formed by a known method. It may beformed by etching by the same method as the exposed region and theauxiliary groove, or may be formed by another method. When it is formedby etching, it may be formed at the same time in the same etching step,or it may be formed in a separate step. Specific examples of othermethods include using a laser scriber (such as a device made by Disco, adevice made by Laser Solution, or a device made by Opto System). Thisgroove can be formed from the laminate side, that is, from the side ofthe second conductivity type nitride semiconductor layer.

In forming the second auxiliary groove, a converged spot of the laserbeam being used is adjusted for focal distance, divergence angleoccurring during propagation, the size of the incident laser beam, andso forth, and the focal depth is preferably adjusted as dictated by thefocal distance, converged spot size, wavelength, and so forth.

As an example, the wavelength of the laser beam that is used may be bout150 to 600 μm, and the energy level about 0.1 to 10 W. When the secondauxiliary groove is provided by laser scribing, depending on theformation condition, pn junctions may be destroyed and leakage mayoccur. However, the occurrence of leakage can be reduced by forming thesecond auxiliary groove in the island layer.

For example, the second auxiliary groove is preferably formed to a depththat reaches from the second conductivity type nitride semiconductorlayer to the substrate. More specifically, this depth may be about 3 to30 μm, and especially about 5 to 25 μm.

Selecting the depth and/or shape of the second auxiliary groove as aboveprevents cracking at unintended stages and locations during thesubsequent process, and allows the intended cleavage to be accomplishedmore easily.

When a plurality of element regions are formed on the substrate (wafer)in the form of a matrix or in a direction perpendicular to the cavitydirection or in the cavity direction, the second auxiliary groove theyare preferably formed all at once in this step over the entiresubstrate. When the second auxiliary groove is formed in this way, thegroove formation portion for the wafer as a whole can be imaged andrecognized in wafer units, so the second auxiliary grooves can be formedin the element regions of the entire wafer in a single operation. Thismeans that the machining process is simplified, and the machiningentailed in forming the second auxiliary grooves in the entire waferwill not take as long.

After the second auxiliary groove has been formed, it may be washed asneeded. That is, after the second auxiliary groove has been formed,depending on the energy of the laser beam, the metal elements that makeup the nitride semiconductor layer may scatter and adhere to the surfaceof the exposed region around the groove or the surfaces inside thegroove, for example.

Therefore, this scattered material is preferably washed away by a knownmethod such as dipping, rinsing, ultrasonic washing, or the like, using,for example, nitric acid, hydrofluoric acid, sulfuric acid, hydrochloricacid, acetic acid, hydrogen peroxide, or another such acid, either aloneor as a mixture of two or more of these; ammonia or another such alkali,either alone or as a mixture of ammonia and hydrogen peroxide or thelike; any of various surfactants; or another suitable etchant.

This washing effectively removes the scattered material, etc., with theetchant, and therefore avoids the problem of diminished elementcharacteristics that would otherwise be caused by such material. Inaddition, since the cavity end face has yet to be formed at this stage,the cavity end face is not exposed to the etchant, so the scatteredmaterial can be effectively removed without damaging the cavity endface.

At any stage after the ridge stripe has been formed, a first protectivefilm is preferably formed on the surface of the semiconductor layer ofthe second conductivity type and on both side faces of the ridge.Examples of the material of the first protective film include oxides andnitrides of Ti, Al, Zr, V, Nb, Hf, Ta, Ga, and Si. The first protectivefilm can be formed by a method known in this field, such as CVD, vapordeposition, ECR (electron cyclotron resonance plasma) sputtering,magnetron sputtering, and various other such methods, which can be usedto produce a single layer or a laminated structure.

A single-layer film may be formed as a film whose composition is thesame but whose film properties differ, by changing the manufacturingmethod or conditions, or a laminated film of these materials may beused. When a first protective film is formed, it is preferably formedover the nitride semiconductor layer in a state in which the maskpattern used in the formation of the ridge as discussed above is left inplace.

Also, the first protective film may be annealed after it has beenformed. For example, suitable conditions include annealing at about 300°C. or higher, and preferably about 400° C. or higher, under anatmosphere containing nitrogen and/or oxygen.

A p-side electrode is preferably formed at any stage on the surface ofthe semiconductor layer of the second conductivity type (when a ridgehas been formed, on its surface). When the p-side electrode is onehaving a two-layer structure composed of nickel and gold, for example,first a nickel film is formed in a thickness of about 5 to 20 nm overp-type semiconductor layer, and then a film of gold is formed in athickness of about 50 to 300 nm. If the p-side electrode has athree-layer structure, it is formed as Ni—Au—Pt or Ni—Au—Pd, in thatorder.

A pad electrode may be formed as needed over the p-side electrode. Thepad electrode is preferably a laminated film composed of Ni, Ti, Au, Pt,Pd, W, or another such metal. More specifically, an example is a filmformed as W—Pd—Au, Ni—Ti—Au, or Ni—Pd—Au, in that order, from the p-sideelectrode side. There are no particular restrictions on the thickness ofthe pad electrode, but the thickness of the gold that makes up the lastlayer is preferably at least about 100 nm. There are no particularrestrictions on the shape of the pad electrode, but the shape preferablyhas projection and/or depression so as to correspond a shape of theisland layer and/or the exposed region.

Ohmic annealing is preferably performed at some stage, such as after thep-side electrode has been formed. For example, suitable conditionsinclude annealing at about 300° C. or higher, and preferably about 400°C. or higher, under an atmosphere containing nitrogen and/or oxygen.

A second protective film may also be formed over this first protectivefilm at some stage, such as after the first protective film has beenformed. The second protective film can be formed by a method known inthis field, and can be selected from among the same materials as thefirst protective film discussed above.

The second main face of the substrate is preferably polished at somestage, such as before an n-side electrode has been formed. Furthermore,an n-side electrode is preferably formed over all or part of the secondmain face of the substrate, either before or after the formation of thep-side electrode. An n-side electrode can be formed by sputtering, CVD,vapor deposition, or the like, for example. It is preferable to use alift-off method to form the n-side electrode, and after the n-sideelectrode has been formed, it is preferable to perform annealing atabout 300° C. or higher.

The n-side electrode can be formed, for example, with the thickness ofabout 1 μm or less, from the substrate side, of V (thickness: 10 nm)-Pt(thickness: 200 nm)-Au (thickness: 300 nm), Ti(10 nm)-Al(500 nm), Ti(6nm)-Pt(100 nm)-Au(300 nm), Ti(6 nm)-Mo(50 nm)-Pt(100 nm)-Au(210 nm),Ti(6 nm)-Hf(6 nm)-Pt(100 nm)-Au(300 nm), Ti(6 nm)-Mo(50 nm)-Ti(50nm)-Pt(100 nm)-Au(210 nm), W—Pt—Au, W—Al—W—Au, etc., or from the nitridesemiconductor layer side, of Hf-A, Ti—W—Pt—Au, Ti—Pd—Pt—Au, Pd—Pt—Au,Ti—W—Ti—Pt—Au, Mo—Pt—Au, Mo—Ti—Pt—Au, W—Pt—Au, V—Pt—Au, V—Mo—Pt—Au,V—W—Pt—Au, Cr—Pt—Au, Cr—Mo—Pt—Au, Cr—W—Pt—Au, etc.

The n-side electrode is preferably formed by applying a pattern over anarea that excludes a cleavage line, scribe region, and/or the like forforming the cavity end face (discussed below) and/or over a laserscribed groove (discussed below).

The n-side electrode may be formed in the exposed region of thesemiconductor layer of the first conductivity type at this stage or anysubsequent stage, rather than on the second main face of the substrate.For instance, the n-side electrode may be formed in the exposed regionwhen the substrate is an insulating substrate.

Further, a metallized electrode may be formed over the n-side electrodeas needed.

The Examples of the metallized electrode include, for example,Ti—Pt—Au—(Au/Sn), Ti—Pt—Au—(Au/Si), Ti—Pt—Au—(Au/Ge), Ti—Pt—Au—In,Au—Sn, In, Au—S, Au—Ge and the like. There are no particularrestrictions on the thickness of the metallized electrode.

After this, or at any stage, the resistance of the p-type semiconductorlayer may be lowered by annealing the wafer at a temperature of about700° C. or higher, in a nitrogen atmosphere, and in a reaction vessel.

When the second auxiliary groove is formed, then after this secondauxiliary groove has been formed, the first and second auxiliary groovesare utilized to divide the substrate and the laminate and form a cavityend face. The division here can be accomplished with a known method. Forinstance, as needed, a circular roller, blade, or the like is broughtinto contact with the opposite side from the one on which the first andsecond auxiliary grooves are formed, that is, the substrate side, andstress is concentrated in the first and second auxiliary grooves,allowing the substrate and laminate to be cleaved and divided into bars.

Also, as needed, a dielectric film is preferably formed on the resultingcavity end face, that is, on the light reflection side and/or lightemission face of the cavity end face. The dielectric film can be formedof a single or multi layer film by SiO₂, ZrO₂, TiO₂, Al₂O₃, Nb₂O₅, AlN,AlGaN and the like. When the cavity end face is formed by cleavage, thedielectric film can be formed with good reproducibility.

As needed, the bar-shaped substrate and laminate are divided in thecavity direction in the exposed region. The division here can beaccomplished with a known method. For instance, a blade brake, a rollerbrake, a press brake, or another various other methods can be employed.Furthermore, division can also be performed after subjecting theintended division location to working by laser scribing, RIE or othersuch etching, or the like, i.e., forming an exposure region or a groove(which is formed at a region corresponding to a broken line B2 as shownin FIG. 8 in the same manner as the auxiliary groove 15 as shown in FIG.7) at the intended division location. Also, it can be formed the exposedregions or grooves in the form of the wafer (before forming bars). Also,the substrate and laminate can be cleaved and divided by bringing acircular roller, blade, or the like into contact with the substrateside, and concentrating stress in the exposed region. This allows a chipto be obtained that constitutes one unit of a semiconductor laserelement.

Also, the nitride semiconductor laser element of the present inventionhas an exposed region, which comprises a laminate over a substrate, atleast the first conductivity type nitride semiconductor layer of isexposed on both sides in the cavity direction of the element region, andthe exposed region is provided continuously in the cavity direction ofthe laser element, and an island layer that is separated from theelement region by this exposed region.

As shown in FIGS. 2 a and 2 a′, etc., the island layer is separated fromthe element region by an auxiliary groove and an exposed region.Providing the above-mentioned auxiliary groove gives an end face of theelement region provided to the inside from the cavity end face andcontinuously with the cavity end face at the end in the cavitydirection. The end of the island layer is formed in substantially thesame plane as the end face of the element region.

The island layer, as discussed above, is preferably formed at the end ofthe laser element in the cavity direction. This island layer may bedisposed only at the end on the light emission side of the cavity, butmay also be disposed at the end on the opposite side. Having the islandlayer allows an end face protective film to be formed in the desireduniform thickness, and affords better service life characteristics.

If no island layer is provided, and the semiconductor laminate over theregion of high dislocation density is removed continuously in the cavitydirection, the resulting shape will have a step in the cavity end face,and this may result in uneven electric field strength during sputteringof the end face portion in the formation of the end face protectivefilm, so that the end face protective film is not formed uniformly.

However, providing the island layer makes the step at the cavity endface smaller, so the strength distribution of the electric field duringend face protective film formation is more uniform, and the end faceprotective film can be formed with uniform quality and thickness.

A nitride semiconductor laser element having a uniform end faceprotective film such as this will undergo less separation of the endface protective film during a service life test, which means that theservice life characteristics are enhanced. Also, because the islandlayer is separated in the cavity direction, there is less of thecracking that would be caused by a difference in the coefficient ofthermal expansion attributable to the heat generated during drive of theelement. Therefore, this prevents such problems as threshold currentincreasing, decreased slope efficiency, fluctuation in the current valueduring drive, and sudden stoppage of oscillation.

Examples of the method for manufacturing a nitride semiconductor laserelement and a nitride semiconductor laser element of the presentinvention will now be described in detail through reference to thedrawings.

EXAMPLE 1

A method for manufacturing a laser element of this Example is explainedby the following.

First, an n-GaN substrate is set in a reaction vessel of the MOVPEapparatus. In the reaction vessel, a first buffer layer composed ofn-Al_(0.02)Ga_(0.98)N doped with Si at 1×10¹⁸/cm³ is grown on the GaNsubstrate using trimethyl aluminum (TMA), trimethyl gallium (TMG) andammonia (NH₃) as the raw material gas with a silane gas for an impuritygas. After that, a second buffer layer composed of n-In_(0.04)Ga_(0.96)Ndoped with Si at 1×10¹⁸/cm³ is grown using trimethylindium (TMI), TMGand NH₃ as the raw material gas with a silane gas for an impurity gas.

An n-side clad layer composed of Al_(0.11)Ga_(0.89)N doped with Si at1×10¹⁸/cm³ is grown using TMG, TMA and NH₃.

Next, n-side wave guide layer composed of undoped Al_(0.06)Ga_(0.94)N isgrown.

The temperature is set to 950° C., a barrier layer composed ofAl_(0.15)Ga_(0.85)N doped with Si at 1×10¹⁹/cm³ is grown using TMA, TMGand NH₃. The silane gas is stopped, a well layer composed of undopedIn_(0.01)Ga_(0.99)N are laminated on the barrier layer. At sametemperature, finally the barrier layer composed of Al_(0.15)Ga_(0.85)Nis formed to grow an active layer composed of a single quantum wellstructure (SQW).

Cp₂Mg (biscyclopentadienyl magnesium) is used, a p-side cap layercomposed of Al_(0.30)Ga_(0.70)N doped with Mg at 1×10²⁰/cm³ is grown onthe active layer, and then Cp₂Mg and TMA are stopped, a p-side waveguide layer composed of undoped p-Al_(0.06)Ga_(0.94)N is grown at agrowth temperature of 1050° C. This p-side wave guide layer is undopedlayer, but magnesium may be included by diffusion from an adjacentlayer, such as the p-side cap layer, at 1×10¹⁷/cm³.

Next, TMA is used, the temperature is set to 1050° C., and an A layercomposed of undoped Al_(0.13)Ga_(0.87)N (2.5 nm thick) is grown, andthen Cp₂Mg gas is used, a B layer composed of Al_(0.09)Ga_(0.91)N dopedwith Mg at 1×10¹⁹/cm³ (2.5 nm thick) is laminated. The A layer and the Blayer are alternately laminated, and this process is repeated 120 timesto grow a p-side clad layer composed of a super lattice structure with atotal thickness of 0.6 μm.

Finally, a p-side contact layer composed of GaN doped with Mg at1×10²⁰/cm³ is grown on the p-side clad layer.

The resulting wafer on which a laminate of the nitride semiconductorlayers has been grown is taken out of the reaction vessel, and a maskwith a predetermined pattern is formed on the surface of the p-sidecontact layer. And the nitride semiconductor layers are etched using themask from the p-side contact layer side to a part of the n-side cladlayer to form a exposed layer 11 a exposing the n-side clad layer, anisland layer 13 a and an auxiliary groove 15, as shown in FIG. 1. Thelength of the cavity was set to about 600 μm, the width of the exposedregion 11 a to about 30 μm, the shortest distance from the island layer13 a to the ridge 14 to about 75 μm, the shortest distance from theisland layer 13 a to the laminate of the element region (the width M inFIG. 1) to about 5 μm, and the length of the island layer 13 a (thelength L in FIG. 1) to about 50 μm. Also, the auxiliary groove 15 wasformed at a width N of about 5 μm and a length of about 70 μm in theridge direction from the end of the exposed region 11 a.

Next, a mask pattern composed of SiO₂ with a width of about 2.3 μm,stripe-shaped is formed on the surface of the p-side contact layer.After this, RIE and the mask pattern are used to etch down to near theinterface between the p-side clad layer and the p-side wave guide layerto form a stripe-like ridge (see 14 in FIG. 1).

In a state in which the mask pattern had been formed, a first protectivefilm composed of laminated layers of Al₂O₃ (20 nm thick) and ZrO₂ (180nm thick) was formed on the surface of a nitride semiconductor layer.After this, annealing was performed at 400° C., and then the maskpattern formed over the p-side contact layer was dissolved away, and thefirst protective film formed over the p-side contact layer was removedalong with the mask pattern composed of SiO₂ by lift-off method.

Then, a p-side ohmic electrode was formed in a stripe shape on the ridgeoutermost surface of the p-side contact layer, and a p-side padelectrode electrically connected with the p-side ohmic electrode wasformed over this.

The back of the substrate was polished, and an n-side ohmic electrodewas formed on the back of a polished n-type GaN substrate.

After this, the GaN substrate was cleaved into wafers along the linesindicated by the arrows X in FIG. 1, for example, to produce cavity endfaces along the cleaved planes of the bars.

A dielectric film was formed on the cavity end face. An Al₂O₃ film wasformed in a thickness of about 70 nm on the light emission side. Amultilayer dielectric film comprising a laminated film of ZrO₂ and SiO₂(total thickness of about 700 nm) was formed on the opposite side.

After this, the product was divided in a direction perpendicular to thecavity end face (such as along the Y arrows in FIG. 1) to make chipsfrom the bar-shaped wafers.

As shown in FIGS. 2 a to 2 c, the semiconductor laser element thusobtained comprised a substrate 10, over which were laminated an n-typesemiconductor layer 11 (e.g., a first conductivity type semiconductorlayer), an active layer 12, and a p-type semiconductor layer 13 (e.g., asecond conductivity type semiconductor layer) with a ridge 14 formed onits surface. A first protective film (not shown) was formed on bothsides of the ridge 14.

Also a p-side electrode (not shown) electrically connected to the ridge14, and an n-side electrode (not shown) electrically connected to thesubstrate 10 were formed. Further, an island layer 13 a that wasseparated into islands was disposed in the four corners of the laserelement. Since the island layer was divided along the auxiliary groove15 here, the length L1 of the island layer was about 25 μm. The islandlayer was divided in the cavity direction in the exposed region, and thewidth W2 of the island layer was about 150 μm.

As shown in FIG. 3, for the sake of comparison, a semiconductor laserchip was produced by the same method as above, except that the exposedregion and island layer were not provided near the cavity end face.

The laser elements thus obtained were measured for current-voltagecharacteristics using a standard curve tracer.

As a result, with the laser element of the Example, as shown in FIG. 4,the start-up voltage (Vf−10 μA) of the microcurrent region was high, andthe shape of the I-V curve can be seen to be sharper and have betterstart-up voltage than in the comparative example in FIG. 5. With a laserelement having such good start-up voltage, the service lifecharacteristics tended to be better than those of the laser element inthe comparative example.

In the division of the wafer using the first and second auxiliarygrooves, breakage in the intended direction could be reliably performed.That is, whereas the yield varied widely, from 20 to 80%, in cleavage ofthe cavity end face in the comparative example, in the Example the yieldwas higher and more stable at around 70 to 100%.

Also, if laser scribing is utilized, the portions to be laser scribedcan be recognized and worked in wafer units, so working time can beshortened and running costs reduced, and since there is no need toreplace consumable members as in a scribing method that entails physicalcontact, manufacturing costs can be lowered further.

Furthermore, since scattered material and so forth can be reliablywashed away without damaging the cavity end face, good characteristicscan be maintained.

EXAMPLE 2

A semiconductor laser chip is produced by substantially the same methodas in Example 1, except that n-type GaN is used, a substrate having afirst region of the (0001) plane and a second region of the (000-1)plane, respectively, a low dislocation density region and a highdislocation density region is used, the width of the exposed regions ischanged in an alternating pattern, and the widths of the exposed regionand the island layer are varied in the cavity end face.

As shown in FIG. 6, the laser element of this Example comprised anexposed region 11 a and an exposed region 21 a, which respectively havewidths of about 70 μm and about 30 μm, and the widths of island layers13 b and 21 b near the cavity end face are respectively about 160 μm andabout 120 μm.

As shown in FIGS. 7 a to 7 d, the laser element obtained by thismanufacturing method is such that the island layers 13 a and 21 b areformed with varying widths in the cavity direction. Since the islandlayers are divided at the auxiliary groove 15 here, the length L1 of theisland layers is about 25 μm. Also, the island layers in the exposedregion are divided in the cavity direction, and the widths W3+W4 of theisland layers are about 80 μm and about 60 μm, respectively.

With this laser element, substantially the same effect as in Example 1can be obtained for start-up voltage and yield.

EXAMPLE 3

As shown in FIG. 9, a V-shaped laser scribed groove is formed as asecond auxiliary groove 16, from the p-type contact layer to thesubstrate, at a focal distance of just focus±10 μm, a feed rate of 1 to200 μm/sec, and an output of 0.1 to 10 W, in a direction perpendicularto the cavity direction, after p-side ohmic electrode and an n-sideohmic electrode are formed, but before the cavity end face is produced.The maximum depth of the laser scribed groove in this case is about 25μm, and the width of the groove on the p-type contact layer surface (thewidth of the opening of the V-groove) is about 5 μm. The length of thesecond auxiliary groove 16 in the island layer 13 b is 140 μm, and thelength of the second auxiliary groove in the island layer 21 b is 100μm.

After this, an acetic acid solution is used to ultrasonically wash theinterior and surface of the laser scribed groove, and any scatteredmaterial, etc., adhering thereto is removed.

A laser element is then produced in the same manner as in Example 1.

With this laser element, substantially the same effect as in Example 1is obtained for start-up voltage. Also, compared to Example 1, the yieldof primary cleavage is higher, and as a result the overall yield isincreased.

EXAMPLE 4

As shown in FIG. 10, with the laser element of this Example, an islandlayer 13 a and an island layer 33 a are formed so as to be separated atthe intended division location in the cavity direction, and a pluralityare disposed in a direction perpendicular to the cavity direction withina single exposed region. Furthermore, the second auxiliary groove 16 isformed within the island layers. The exposed region 11 a and the exposedregion 31 a are formed in respective widths of about 30 μm and about 70μm, and the island layer 13 a is formed at a width of about 12 μm and alength of 7 μm within the exposed region. The island layer 33 a isformed at a width of about 32 μm and a length of 7 μm. The secondauxiliary groove 16 is formed as shown in FIG. 10, in the same manner asin Example 3, after the p-side ohmic electrode and an n-side ohmicelectrode are formed, but before the cavity end face is produced.

After this, a laser element is produced in the same manner as in Example1, and divided in the region indicated by the broken lines B1 in theauxiliary groove 15 and B2.

As shown in FIGS. 2 a to 2 c, the laser element obtained by thismanufacturing method is such that the island layers 13 a and 33 a, whichare separated into islands, are disposed in the four corners of thelaser element. With this laser element, substantially the same effect asin Example 1 is obtained for start-up voltage. Also, compared to Example1, the yield of primary cleavage is higher, and the yield of secondarycleavage is increased. As a result the overall yield is higher.

EXAMPLE 5

As shown in FIG. 11 a, with the laser element of this Example, an islandlayer 43 a and an island layer 43 b are formed so as to be separated toeach other at the intended division location in the cavity direction,and a plurality are disposed in a direction perpendicular to the cavitydirection within a single exposed region. Furthermore, an exposed region41 a is formed wider so as to protrude to just one side, and the islandlayer 43 a is formed so as to correspond to the shape of this exposedregion 41 a.

As shown in FIG. 11 b, the island layer 43 a is formed wider near thecavity end face. The width of the exposed region 41 a is about 30 μm,and within the exposed region, the island layer 43 a is formed wider,with a width of about 62 μm, while the island layer 43 b is formed at awidth of about 12 μm. The length of the island layers 43 a and 43 b is 7μm.

After this, a laser element is produced in the same manner as in Example1, and divided in the region indicated by the broken lines B1 in theauxiliary groove 15 and B2.

As shown in FIG. 11 b, with the laser element obtained by thismanufacturing method, the island layers 43 a and 43 b, which havedifferent widths on the left and right, are disposed near the cavity endface. Also, with the laser element of this Example, the cavity length is300 μm and the width of the element is 120 μm.

With this laser element, substantially the same effect as in Example 1is obtained for start-up voltage and yield. Also, this laser element ismore compact than in the other Examples, but because a wide region isprovided on one side of the element, the region of wire bonding can bemade wider.

EXAMPLE 6

A semiconductor laser is produced by using an n-type GaN substrate whichhas a first region of the (0001) plane and a second region of the(000-1) plane, respectively, a low dislocation density region and a highdislocation density region as shown in FIG. 12 a. The high dislocationdensity region is formed with a ellipse-shape having a major axisdiameter of 80 μm and a miner axis diameter of 79 μm over a wafer atregular intervals.

A second island layer 53 b is formed in addition to island layers 53 adisposed in the four corners of the laser element. In particular, thewidth of the element regions is periodically changed, and the exposedregion 51 a and the second island layers 53 b are formed correspondingto this change. The laser element is formed by dividing the wafer alonga broken line B1 which is along a auxiliary groove 15 formed parallel tothe cavity end face and a broken line B2 so as to dispose the islandlayer 53 a in the four corners of the laser element.

The laser element of this Example is produced by substantially the samemethod as in Example 1 except above.

As shown in FIG. 12 b, with the laser element of this Example, thecavity length is 1200 μm, and the width of a chip is 200 μm. The islandlayers 53 a, which respectively have the widths of 71 μm and the lengthsof 24 μm, are disposed in the four corners of the laser element. Theexposed layer 51 a, which has the width of 2 μm, is formed around theisland layers 53 a, and expands from around the island layer 53 acontinuously in the direction of the cavity parallel with the ridge 14.The element region is changed periodically its width, and three secondisland layers 53 b are formed corresponding to this change. The secondisland layer 53 b has the width of 52 μm and the length of 144 μm, anddisposed a distance of 20 μm from the end face of the laser element.

With this laser element, substantially the same effect as in Example 1can be obtained for start-up voltage and yield.

The present invention is available in the method for manufacturing alight emitting diode (LED) as well as the laser element.

While only selected embodiments have been chosen to illustrate thepresent invention, it will be apparent to those skilled in the art fromthis disclosure that various changes and modifications can be madeherein without departing from the scope of the invention as defined inthe appended claims. Furthermore, the foregoing descriptions of theembodiments according to the present invention are provided forillustration only, and not for the purpose of limiting the invention asdefined by the appended claims and their equivalents. Thus, the scope ofthe invention is not limited to the disclosed embodiments.

What is claimed is:
 1. A nitride semiconductor laser element comprising:a laminate that includes on a substrate a first conductivity typenitride semiconductor layer, an active layer, and a second conductivitytype nitride semiconductor layer, and that constitutes a cavityresonator, the laminate including an element region in which the laserelement is formed, an exposed region in which at least the firstconductivity type nitride semiconductor layer is exposed on both sidesof the element region in the cavity direction, and which is providedcontinuously in a cavity resonating direction of the laser element, andan island layer that is separated from the element region by the exposedregion with the exposed region being disposed between the island layerand the element region, and that is disposed in a corner of the nitridesemiconductor laser element.
 2. The element according to claim 1,wherein the element region has a cavity end face, and an end faceprovided to the inside of the cavity end face and continuously with thecavity end face, and the island layer has an end face provided insubstantially the same plane as the end face of the element region. 3.The element according to claim 1, wherein the island layer is wider atan end face of the cavity resonator.
 4. The element according to claim1, wherein the substrate has a first region that alternates with asecond region that has a higher dislocation density than the firstregion, and the exposed region is disposed above the second region. 5.The element according to claim 1, wherein the island layers are providedat both corners of an end face of the cavity resonator on at least thelight emission side, and a stripe-like ridge extending in the cavityresonating direction and being at substantially the same distance fromthe island layer is formed on the surface of the second conductivitytype nitride semiconductor layer.
 6. The element according to claim 1,wherein the island layers are provided at both corners of an end face ofthe cavity resonator on at least the light emission side.